अतिरिक्त सामग्री (फ़ुटनोट्स)[1] A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, T.G Yugova, E.A. Petrova, H. Amano, T. Ka-washima, K.D. Scherbatchev, V.T. Bublik, Electrical Properties and Deep Traps Spectra in Undoped and Si-doped M-plane GaN Films, J. Appl. Phys. 105(6), 063708 (2009)
[2] A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, Q. Sun, Y. Zhang, C. D. Yerino, T.-S. Ko, I.-H. Lee, J. Han, Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire, Materials Science and Engineering B, B166, 220-224 (2010)
[3]. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, Q. Sun, Y. Zhang, Y.S. Cho, I.-H. Lee, J. Han, Electrical and luminescent properties and deep traps spectra of N-polar GaN films, Materials Science &Engineering B, 166, 81-88 (2010)
[4] A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, H. Amano, S.J. Pearton, I.-H. Lee, Q. Sun, J. Han and S.Yu. Karpov, Role of Non-Radiative Recombination Centers in Nonpolar GaN in Light Emission Efficiency and Relation to Extended Defects, Appl. Phys. Lett. 98, 072104 (2011)
[5] A.Y. Polyakov and In-Hwan Lee, Deep traps in GaN-based structures as affecting the performance of GaN devices (a review), Mat. Sci& Eng. ®, 94, 1-56 (2015)
[6] In-Hwan Lee, Lee-Woon Jang, and AlexanderY.Polyakov, Performance enhancement of GaN-based light emitting diodes by the interaction with localized surface plasmons, Nano Energy (a review) 13, 140–173 (2015)
[7]P.B. Klein, B.V. Shanabrook, S.W. Huh, A.Y. Polyakov, M. Skowronski, J.J. Shumakeris, and M.J. O’Loughlin, Lifetime-limiting defects in n- 4H-SiC epilayers, Appl. Phys. Lett. 88, 052110 (2006)
[8] A.Y. Polyakov, A.V. Govorkov, N.B. Smirnov, A.V. Markov, In-Hwan Lee, Jin-Woo Ju, S.Yu. Karpov, N.M. Shmidt, and S.J. Pearton, Properties of Undoped GaN/InGaN Multi-Quantum Wells and GaN/InGaN p-n Junctions Prepared By Epitaxial Lateral Overgrowth, J. Appl. Phys. 105, 123708 (2009)
[9] O. Soltanovich and E. Yakimov, Capacitance-voltage and admittance investigations of InGaN/GaN MQW LEDs: frequency dependence, Phys. Status Solidi (c ) 10, 338–341 (2013)
[10]A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, and E.A. Kozhukhova, S.J. Pearton, F. Ren and L. Lu, J.W. Johnson, R.V. Ryzhuk, N.I. Kargin, Deep traps in AlGaN/GaN heterojunctions and transistor structures grown on Si substrate, J. Vac. Sci. Technol. B 31, 011211 (2013)
[11] A. Sasikumar, A. R. Arehart, S. Martin-Horcajo, M. F. Romero, Y. Pei, D. Brown,
F. Recht, M. A. di Forte-Poisson, F. Calle, M. J. Tadjer, S. Keller, S. P. DenBaars,
U. K. Mishra, and S. A. Ringel, Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy, Appl. Phys. Lett. 103, 033509 (2013)
[12] A.R. Arehart, A. Sasikumar, S. Rajan, G.D. Via, B. Poling, B. Winningham, E.R. Heller, D. Brown, Y. Pei, F. Recht, U.K. Mishra, and S.A. Ringel, Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors, Solid-State Electronics 80, 19–22 (2013)
[13] Y. Nakano, Y. Irokawa, and M. Takeguchi, Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces, Appl. Phys. Express, 1, 091101 (2008)
[14] A. Armstrong, T. A. Henry, D. D. Koleske, M. H. Crawford, K. R. Westlake, and S. R. Lee, Dependence of radiative efficiency and deep level defect incorporation
on threading dislocation density for InGaN/GaN light emitting diodes, Appl. Phys. Lett. 101, 162102 (2012)
[15] A.Y. Polyakov, N.B. Smirnov, In-Hwan Lee, and S.J. Pearton, Deep level transient spectroscopy in III-Nitrides: decreasing the effects of series resistance, to be published in J. Vac. Sci. Technol. (b) (2015)
[16] O. Mitrofanov and M. Manfra, Mechanisms of gate lag in GaN/AlGaN/GaN high
electron mobility transistors, Review, Superlattices and Microstructures 34, 33–53 (2003)
[17] J. Joh and J. A. del Alamo, A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors, IEEE Trans. Electron. Dev. 58, 132-140, (2011)